IRF1407PBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 75 V, 130 A, 0.0078 OHM, TO-220AB, THROUGH HOLE

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IRF1407PBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 75 V, 130 A, 0.0078 OHM, TO-220AB, THROUGH HOLE

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DocumentsIR Part Numbering System Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF1407PBF

Current - Continuous Drain (Id) @ 25°C	130 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	330 W
Rds On (Max) @ Id, Vgs [Max]	7.8 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRF1407 Series

Part	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Supplier Device Package	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max)
Infineon Technologies IRF1407PBF	7.8 mOhm	75 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	330 W	TO-220AB	TO-220-3	N-Channel	10 V	4 V	130 A	5600 pF	Through Hole	20 V
Infineon Technologies IRF1407PBF	7.8 mOhm	75 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	330 W	TO-220AB	TO-220-3	N-Channel	10 V	4 V	130 A	5600 pF	Through Hole	20 V
Infineon Technologies IRF1407STRLPBF	7.8 mOhm	75 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	3.8 W 200 W	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	10 V	4 V	100 A	5600 pF	Surface Mount	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	237	$ 1.27
		237	$ 1.27
	Tube	1	$ 2.94
		1	$ 2.94
		10	$ 1.92
		10	$ 1.92
		100	$ 1.34
		100	$ 1.34
		500	$ 1.10
		500	$ 1.10
Newark	Each	1	$ 2.82
		10	$ 2.05
		100	$ 1.27
		500	$ 1.12

Description

General part information

IRF1407 Series

The IRF1407PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this HEXFET® power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Documents

Technical documentation and resources