Technical Specifications
Parameters and characteristics for this part
| Specification | STAC4932B |
|---|---|
| Configuration | N-Channel |
| Frequency | 123 MHz |
| Gain | 26 dBi |
| Package / Case | STAC244B |
| Power - Output | 1000 W |
| Supplier Device Package | STAC244B |
| Technology | MOSFET (Metal Oxide) |
| Voltage - Rated | 200 V |
| Voltage - Test | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tray | 80 | $ 100.09 | |
Description
General part information
STAC4932 Series
The STAC4932B is an N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications. The STAC4932B benefits from the latest generation of efficient, patent-pending STAC package technology.Excellent thermal stabilityCommon source push-pull configurationPOUT= 1000 W min. (1200 W typ.) with 26 dB gain @ 123 MHzPulse conditions: 1 msec - 10%In compliance with the 2002/95/EC European directiveST air-cavity STAC®packaging technology
Documents
Technical documentation and resources