Specification	STD4NS25T4

Current - Continuous Drain (Id) (Tc)	4 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	27 nC
Input Capacitance (Ciss) (Max)	355 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	DPak
Power Dissipation (Max)	50 W
Rds On (Max)	1.1 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

STD4N Series

Part	Vgs (Max)	Package Name	Rds On (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)	Package / Case	Input Capacitance (Ciss) (Max)	FET Type	Operating Temperature	Operating Temperature (Min)	Operating Temperature (Max)
STMicroelectronics STD4NS25T4	20 V	DPak	1.1 Ohm	27 nC	250 V	Surface Mount	MOSFET (Metal Oxide)	4 A	50 W	10 V	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	355 pF	N-Channel	150 °C
STMicroelectronics STD4NK50ZD	30 V	DPak	2.7 Ohm	12 nC	500 V	Surface Mount	MOSFET (Metal Oxide)	3 A	45 W	10 V	4.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	310 pF	N-Channel		-55 °C	150 °C
STMicroelectronics STD4NK50ZD-1	30 V	IPAK	2.7 Ohm	12 nC	500 V	Through Hole	MOSFET (Metal Oxide)	3 A	45 W	10 V	4.5 V	IPAK TO-251-3 Short Leads TO-251AA	310 pF	N-Channel		-55 °C	150 °C
STMicroelectronics STD4NK50Z-1	30 V	IPAK	2.7 Ohm	12 nC	500 V	Through Hole	MOSFET (Metal Oxide)	3 A	45 W	10 V	4.5 V	IPAK TO-251-3 Short Leads TO-251AA	310 pF	N-Channel		-55 °C	150 °C

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