IXTK8N150L

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IXYS

MOSFET N-CH 1500V 8A TO264

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IXYS

MOSFET N-CH 1500V 8A TO264

Technical Specifications

Parameters and characteristics for this part

Specification	IXTK8N150L

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	1500 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	250 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	8000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max) [Max]	700 W
Supplier Device Package	TO-264 (IXTK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id [Max]	8 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Vgs(th) (Max) @ Id [Max]	Current - Continuous Drain (Id) @ 25°C
IXYS IXTK8N150L	-55 °C	150 °C	Through Hole	700 W	1500 V	N-Channel	TO-264-3 TO-264AA	MOSFET (Metal Oxide)	8000 pF	30 V	250 nC	TO-264 (IXTK)	8 V	8 A

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General part information

N-Channel 1500 V 8A (Tc) 700W (Tc) Through Hole TO-264 (IXTK)

Technical documentation and resources

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