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ESH1JM RSG - mfg_2-SMD,-Flat-Lead,Micro-SMA

ESH1JM RSG

Obsolete
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A MICRO SMA

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ESH1JM RSG - mfg_2-SMD,-Flat-Lead,Micro-SMA

ESH1JM RSG

Obsolete
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A MICRO SMA

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationESH1JM RSG
Capacitance @ Vr, F3 pF
Current - Average Rectified (Io)1 A
Current - Reverse Leakage @ Vr1 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / Case2-SMD, Flat Leads
Reverse Recovery Time (trr)25 ns
Speed200 mA, 500 ns
Supplier Device PackageMicro SMA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

ESH1 Series

Diode 600 V 1A Surface Mount Micro SMA

Documents

Technical documentation and resources

No documents available