IPT65R105G7XTMA1

Obsolete

Infineon Technologies

IPT65R105G7XTMA1 INFINEON TECHNOLOGIES AG TRANSISTORS MOSFETS N-CH 650V 24A 9-PIN(8+TAB) HSOF T/R - ARROW.COM

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Obsolete

Infineon Technologies

IPT65R105G7XTMA1 INFINEON TECHNOLOGIES AG TRANSISTORS MOSFETS N-CH 650V 24A 9-PIN(8+TAB) HSOF T/R - ARROW.COM

Technical Specifications

Parameters and characteristics for this part

Specification	IPT65R105G7XTMA1

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1670 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerSFN
Power Dissipation (Max)	156 W
Rds On (Max) @ Id, Vgs	105 mOhm
Supplier Device Package	PG-HSOF-8-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Technology	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package
Infineon Technologies IPT65R105G7XTMA1	24 A	N-Channel	MOSFET (Metal Oxide)	650 V	156 W	4 V	Surface Mount	35 nC	-55 °C	150 °C	1670 pF	8-PowerSFN	20 V	105 mOhm	10 V	PG-HSOF-8-2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 24A (Tc) 156W (Tc) Surface Mount PG-HSOF-8-2

Technical documentation and resources

No documents available