
BUK9Y15-60E,115
ActiveNexperia USA Inc.
N-CHANNEL 60 V, 15 MΩ LOGIC LEVEL MOSFET IN LFPAK56

BUK9Y15-60E,115
ActiveNexperia USA Inc.
N-CHANNEL 60 V, 15 MΩ LOGIC LEVEL MOSFET IN LFPAK56
Description
General part information
BUK9Y15 Series
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | BUK9Y15-60E,115 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 53 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 17.2 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 2603 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SOT-669, SC-100 |
| Package Name | LFPAK56, Power-SO8 |
| Power Dissipation (Max) | 95 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 13 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 10 V |
| Vgs(th) (Max) | 2.1 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
BUK9Y15-60E Thermal design model
LFPAK MOSFET thermal design guide - Part 2
Understanding power MOSFET data sheet parameters
LFPAK MOSFET thermal design guide, Chinese version
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