AOT266L

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 18A/140A TO220

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 18A/140A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	AOT266L

Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	90 nC
Input Capacitance (Ciss) (Max) @ Vds	5650 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	268 W, 2.1 W
Rds On (Max) @ Id, Vgs [Max]	3.5 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.2 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology	Mounting Type	Package / Case	Supplier Device Package	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	FET Type
Alpha & Omega Semiconductor Inc. AOT266L	-55 °C	175 ░C	5650 pF	6 V 10 V	MOSFET (Metal Oxide)	Through Hole	TO-220-3	TO-220	20 V	90 nC	3.2 V	3.5 mOhm	2.1 W 268 W	60 V	N-Channel

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