AOK18N65L

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 18A TO247

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Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 18A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	AOK18N65L

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	68 nC
Input Capacitance (Ciss) (Max) @ Vds	3785 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	417 W
Rds On (Max) @ Id, Vgs	390 mOhm
Supplier Device Package	TO-247
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C
Alpha & Omega Semiconductor Inc. AOK18N65L	68 nC	TO-247-3	390 mOhm	TO-247	-55 °C	150 °C	4.5 V	3785 pF	30 V	MOSFET (Metal Oxide)	N-Channel	650 V	10 V	Through Hole	417 W	18 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$