IPD95R750P7ATMA1
ActiveCOOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 950 V ; DPAK TO-252 PACKAGE; 750 MOHM; PRICE/PERFORMANCE
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IPD95R750P7ATMA1
ActiveCOOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 950 V ; DPAK TO-252 PACKAGE; 750 MOHM; PRICE/PERFORMANCE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPD95R750P7ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9 A |
| Drain to Source Voltage (Vdss) | 950 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 712 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) [Max] | 73 W |
| Rds On (Max) @ Id, Vgs | 750 mOhm |
| Supplier Device Package | PG-TO252-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.50 | |
| 10 | $ 1.61 | |||
| 100 | $ 1.10 | |||
| 500 | $ 0.88 | |||
| 1000 | $ 0.81 | |||
| Digi-Reel® | 1 | $ 2.50 | ||
| 10 | $ 1.61 | |||
| 100 | $ 1.10 | |||
| 500 | $ 0.88 | |||
| 1000 | $ 0.81 | |||
| Tape & Reel (TR) | 2500 | $ 0.74 | ||
| 5000 | $ 0.74 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 2.56 | |
| 10 | $ 1.91 | |||
| 25 | $ 1.76 | |||
| 50 | $ 1.61 | |||
| 100 | $ 1.46 | |||
| 250 | $ 1.40 | |||
| 500 | $ 1.24 | |||
| 1000 | $ 1.15 | |||
Description
General part information
IPD95R750 Series
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest950 V CoolMOS™ P7technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th)of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in.
Documents
Technical documentation and resources