SSM6K781G,LF

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Toshiba Semiconductor and Storage

MOSFET N-CH 12V 7A 6WCSP6C

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Toshiba Semiconductor and Storage

MOSFET N-CH 12V 7A 6WCSP6C

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6K781G,LF

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5.4 nC
Input Capacitance (Ciss) (Max) @ Vds	600 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-UFBGA, WLCSP
Supplier Device Package	6-WCSPC (1.5x1.0)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)
Toshiba Semiconductor and Storage SSM6K781G,LF	7 A	MOSFET (Metal Oxide)	600 pF	Surface Mount	6-WCSPC (1.5x1.0)	1 V	12 V	6-UFBGA WLCSP	N-Channel	150 °C	5.4 nC	8 V	1.5 V 4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 12 V 7A (Ta) 1.6W (Ta) Surface Mount 6-WCSPC (1.5x1.0)

Technical documentation and resources