STW16NK60Z

Obsolete

STMicroelectronics

MOSFET N-CH 600V 14A TO247-3

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Obsolete

STMicroelectronics

MOSFET N-CH 600V 14A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	STW16NK60Z

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	86 nC
Input Capacitance (Ciss) (Max) @ Vds	2650 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	190 W
Rds On (Max) @ Id, Vgs	420 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Operating Temperature	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STW16NK60Z	150 °C	420 mOhm	190 W	Through Hole	10 V	30 V	TO-247-3	86 nC	TO-247-3	N-Channel	MOSFET (Metal Oxide)	14 A	4.5 V	600 V	2650 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 14A (Tc) 190W (Tc) Through Hole TO-247-3

Technical documentation and resources