IXFR66N50Q2

Obsolete

IXYS

MOSFET N-CH 500V 50A ISOPLUS247

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Obsolete

IXYS

MOSFET N-CH 500V 50A ISOPLUS247

Technical Specifications

Parameters and characteristics for this part

Specification	IXFR66N50Q2

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	200 nC
Input Capacitance (Ciss) (Max) @ Vds	9125 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs	85 mOhm
Supplier Device Package	ISOPLUS247™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	FET Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Mounting Type	Vgs (Max)
IXYS IXFR66N50Q2	5.5 V	9125 pF	TO-247-3	200 nC	ISOPLUS247™	500 W	10 V	500 V	50 A	N-Channel	85 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	Through Hole	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 50A (Tc) 500W (Tc) Through Hole ISOPLUS247™

Technical documentation and resources

No documents available