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JAN2N4235L

JAN2N4235L

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Microchip Technology

BIPOLAR TRANSISTORS - BJT 60V LONG-LEAD PNP POWER BJT THT

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JAN2N4235L

JAN2N4235L

Active
Microchip Technology

BIPOLAR TRANSISTORS - BJT 60V LONG-LEAD PNP POWER BJT THT

Find alt

Description

General part information

JAN2N4235L-Transistor Series

This specification covers the performance requirements for PNP, silicon, amplifier, 2N4234, 2N4235 and 2N4236 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/580.

Technical Specifications

Parameters and characteristics for this part

SpecificationJAN2N4235L
Current - Collector (Ic) (Max)1 A
Current - Collector Cutoff (Max)1 mA
DC Current Gain (hFE) (Min)40
Mounting TypeThrough Hole
Operating Temperature (Max)200 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-39-3 Metal Can, TO-205AD
Package NameTO-39 (TO-205AD)
Power - Max1 VA
Transistor TypePNP
Vce Saturation (Max)600 mV
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

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