BFP840FESDH6327XTSA1

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Infineon Technologies

TRANSISTOR, NPN, 2.25V, 0.035A, TSFP ROHS COMPLIANT: YES

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Active

Infineon Technologies

TRANSISTOR, NPN, 2.25V, 0.035A, TSFP ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	BFP840FESDH6327XTSA1

Current - Collector (Ic) (Max) [Max]	35 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	150
Frequency - Transition	85 GHz
Gain	35 dBi
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f)	0.75 dB
Operating Temperature	150 °C
Package / Case	4-SMD, Flat Leads
Power - Max [Max]	75 mW
Supplier Device Package	PG-TSFP-4-1
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	2.6 V

Part	Mounting Type	Transistor Type	Operating Temperature	Package / Case	Supplier Device Package	Gain	Power - Max [Max]	Noise Figure (dB Typ @ f)	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	Voltage - Collector Emitter Breakdown (Max) [Max]
Infineon Technologies BFP840FESDH6327XTSA1	Surface Mount	NPN	150 °C	4-SMD Flat Leads	PG-TSFP-4-1	35 dBi	75 mW	0.75 dB	35 mA	150	85 GHz	2.6 V
Infineon Technologies BFP840ESDH6327XTSA1	Surface Mount	NPN	150 °C	SC-82A SOT-343	PG-SOT343-4-2	18.5 dBi	75 mW	0.85 dB	35 mA	150	80 GHz		2.25 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications.

Technical documentation and resources