FZT956TA

Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 2A I(C), 200V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 4 PIN

Search across all available documentation for this part.

Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 2A I(C), 200V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 4 PIN

Technical Specifications

Parameters and characteristics for this part

Specification	FZT956TA

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Frequency - Transition	110 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	3 W
Supplier Device Package	SOT-223-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	370 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	200 V

PNP, 200V, 2A, SOT223

Part	Frequency - Transition	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type
Diodes Inc FZT956TA	110 MHz	-55 °C	150 °C	3 W	370 mV	TO-261-4 TO-261AA	SOT-223-3	200 V	2 A	50 nA	PNP	100 hFE	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP, 200V, 2A, SOT223

Technical documentation and resources