STPSC2H12B2Y-TR
ActiveSILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.2 KV, 2 A, 15.6 NC, TO-252 (DPAK)
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STPSC2H12B2Y-TR
ActiveSILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.2 KV, 2 A, 15.6 NC, TO-252 (DPAK)
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Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.47 | |
| 10 | $ 2.05 | |||
| 100 | $ 1.63 | |||
| 500 | $ 1.38 | |||
| 1000 | $ 1.17 | |||
| Digi-Reel® | 1 | $ 2.47 | ||
| 10 | $ 2.05 | |||
| 100 | $ 1.63 | |||
| 500 | $ 1.38 | |||
| 1000 | $ 1.17 | |||
| Tape & Reel (TR) | 2500 | $ 1.11 | ||
| 5000 | $ 1.07 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 3.70 | |
| 10 | $ 2.65 | |||
| 25 | $ 2.46 | |||
| 50 | $ 2.26 | |||
| 100 | $ 2.07 | |||
| 250 | $ 1.94 | |||
| 500 | $ 1.80 | |||
| 1000 | $ 1.71 | |||
Description
General part information
STPSC2 Series
The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, the STPSC2H065-Y SiC diode will boost performance in hard switching conditions.