STPSC2 Series

Automotive 650V, 2 A Silicon Carbide Power Schottky Diode

Catalog

Automotive 650V, 2 A Silicon Carbide Power Schottky Diode

Part	Reverse Recovery Time (trr)	Speed	Current - Reverse Leakage @ Vr	Package / Case	Grade	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Current - Average Rectified (Io)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Technology	Qualification	Supplier Device Package	Speed	Capacitance @ Vr, F
STMicroelectronics STPSC2H065BY-TR	0 ns	No Recovery Time	20 µA	DPAK (2 Leads + Tab), SC-63, TO-252-3	Automotive	650 V	1.55 V	Surface Mount	2 A	-40 °C	175 ░C	SiC (Silicon Carbide) Schottky	AEC-Q101	DPAK
STMicroelectronics STPSC2H12B2Y-TR			12 µA	DPAK (2 Leads + Tab), SC-63, TO-252-3		1.2 kV	1.5 V	Surface Mount	5 A	-40 °C	175 ░C	SiC (Silicon Carbide) Schottky		DPAK	200 mA, 500 ns	190 pF
STMicroelectronics STPSC2H065B-TR		No Recovery Time	20 µA	DPAK (2 Leads + Tab), SC-63, TO-252-3		650 V	1.55 V	Surface Mount	2 A	-40 °C	175 ░C	SiC (Silicon Carbide) Schottky		DPAK

Catalog

Automotive 650V, 2 A Silicon Carbide Power Schottky Diode

Description

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, the STPSC2H065-Y SiC diode will boost performance in hard switching conditions.