1SS352,H3F

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Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA SC76-2

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Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA SC76-2

Technical Specifications

Parameters and characteristics for this part

Specification	1SS352,H3F

Capacitance @ Vr, F	3 pF
Current - Average Rectified (Io)	100 mA
Current - Reverse Leakage @ Vr	500 nA
Mounting Type	Surface Mount
Operating Temperature - Junction	125 °C
Package / Case	SC-76A
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	SC-76-2
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	80 V

DIODE GEN PURP 80V 100MA SC76-2

Part	Package / Case	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Speed	Speed	Mounting Type	Operating Temperature - Junction	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Supplier Device Package
Toshiba Semiconductor and Storage 1SS352,H3F	SC-76A	3 pF	500 nA	80 V	Standard	Any Speed	200 mA	Surface Mount	125 °C	4 ns	100 mA	SC-76-2

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General part information

Diode 80 V 100mA Surface Mount SC-76-2

Technical documentation and resources