TSM3446CX6 RFG

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Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 20V 5.3A SOT26

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Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 20V 5.3A SOT26

Technical Specifications

Parameters and characteristics for this part

Specification	TSM3446CX6 RFG

Current - Continuous Drain (Id) @ 25°C	5.3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	8.8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	33 mOhm
Supplier Device Package	SOT-26
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1 V

Part	FET Type	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Package / Case
Taiwan Semiconductor Corporation TSM3446CX6 RFG	N-Channel	33 mOhm	MOSFET (Metal Oxide)	Surface Mount	1 V	700 pF	20 V	SOT-26	2.5 V 4.5 V	5.3 A	8.8 nC	2 W	-55 °C	150 °C	12 V	SOT-23-6

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General part information

N-Channel 20 V 5.3A (Tc) 2W (Ta) Surface Mount SOT-26

Technical documentation and resources

No documents available