GP3D030A065B

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SemiQ

DIODE SIL CARB 650V 30A TO247-2

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SemiQ

DIODE SIL CARB 650V 30A TO247-2

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	GP3D030A065B	GP3D030 Series

Capacitance @ Vr, F	1247 pF	1247 pF
Current - Average Rectified (Io)	30 A	30 A
Current - Average Rectified (Io) (per Diode)	-	15 A
Current - Reverse Leakage @ Vr	75 µA	30 - 75 µA
Diode Configuration	-	1 Pair Common Cathode
Mounting Type	Through Hole	Through Hole
Operating Temperature - Junction [Max]	175 ░C	175 ░C
Operating Temperature - Junction [Min]	-55 C	-55 C
Package / Case	TO-247-2	TO-247-3, TO-247-2
Reverse Recovery Time (trr)	0 ns	0 ns
Speed	No Recovery Time	No Recovery Time
Supplier Device Package	TO-247-2	TO-247-3, TO-247-2
Technology	SiC (Silicon Carbide) Schottky	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V	1.2 - 650 kV
Voltage - Forward (Vf) (Max) @ If	1.65 V	1.6 - 1.65 V

DIODE ARR SIC 1200V 15A TO247-3

Part	Diode Configuration	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Speed	Voltage - Forward (Vf) (Max) @ If	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Current - Average Rectified (Io) (per Diode)	Technology	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Capacitance @ Vr, F
SemiQ GP3D030A120U	1 Pair Common Cathode	30 µA	175 ░C	-55 C	Through Hole	No Recovery Time	1.6 V	TO-247-3	1.2 kV	TO-247-3	15 A	SiC (Silicon Carbide) Schottky	0 ns
SemiQ GP3D030A065B		75 µA	175 ░C	-55 C	Through Hole	No Recovery Time	1.65 V	TO-247-2	650 V	TO-247-2		SiC (Silicon Carbide) Schottky	0 ns	30 A	1247 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 30A Through Hole TO-247-2

Technical documentation and resources