TN0606N3-G
ActivePOWER MOSFET, N CHANNEL, 60 V, 500 MA, 1 OHM, TO-92, THROUGH HOLE
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TN0606N3-G
ActivePOWER MOSFET, N CHANNEL, 60 V, 500 MA, 1 OHM, TO-92, THROUGH HOLE
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | TN0606N3-G | TN0606 Series |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | - | 500 mA |
| Drain to Source Voltage (Vdss) | - | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | - | 3 - 10 V |
| FET Type | - | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | - | 150 pF |
| Mounting Type | - | Through Hole |
| null | - | |
| Operating Temperature | - | -55 °C |
| Operating Temperature | - | 150 °C |
| Package / Case | - | TO-226-3, TO-92-3 |
| Power Dissipation (Max) | - | 1 W |
| Supplier Device Package | - | TO-92-3 |
| Technology | - | MOSFET (Metal Oxide) |
| Vgs (Max) | - | 20 V |
| Vgs(th) (Max) @ Id | - | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bag | 1 | $ 1.06 | |
| 25 | $ 0.89 | |||
| 100 | $ 0.80 | |||
| Microchip Direct | BAG | 1 | $ 1.06 | |
| 25 | $ 0.89 | |||
| 100 | $ 0.80 | |||
| 1000 | $ 0.68 | |||
| 5000 | $ 0.61 | |||
| 10000 | $ 0.58 | |||
| Newark | Each | 100 | $ 0.85 | |
TN0606 Series
MOSFET, N-Channel Enhancement-Mode, 60V, 1.5 Ohm
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Vgs (Max) | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Technology | Package / Case | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology TN0606N3-G | ||||||||||||||
Microchip Technology TN0606N3-G | -55 °C | 150 °C | 150 pF | N-Channel | 3 V, 10 V | 60 V | 20 V | 1 W | 500 mA | 2 V | MOSFET (Metal Oxide) | TO-226-3, TO-92-3 | Through Hole | TO-92-3 |
Description
General part information
TN0606 Series
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Documents
Technical documentation and resources