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IPN50R950CEATMA1 - PG-SOT223

IPN50R950CEATMA1

Obsolete
Infineon Technologies

COOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 500 V ; SOT-223 PACKAGE; 950 MOHM; PRICE/PERFORMANCE

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IPN50R950CEATMA1 - PG-SOT223

IPN50R950CEATMA1

Obsolete
Infineon Technologies

COOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 500 V ; SOT-223 PACKAGE; 950 MOHM; PRICE/PERFORMANCE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPN50R950CEATMA1
Current - Continuous Drain (Id) @ 25°C6.6 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)13 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10.5 nC
Input Capacitance (Ciss) (Max) @ Vds231 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseTO-261AA, TO-261-4
Power Dissipation (Max)5 W
Rds On (Max) @ Id, Vgs950 mOhm
Supplier Device PackagePG-SOT223
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
NewarkEach (Supplied on Full Reel) 3000$ 0.30
6000$ 0.29
12000$ 0.28
18000$ 0.28
30000$ 0.27

Description

General part information

IPN50R950 Series

Infineon is growing the portfolio ofCoolMOS™ CEwith theSOT-223 packageas a cost effective alternative to DPAK that also enables footprint reduction in some designs. The package can be placed on a typical DPAK footprint and comes with only a small compromise in thermal behavior. The SOT-223 from Infineon targets LED lighting and mobile charger applications.

Documents

Technical documentation and resources