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BSD223PH6327XTSA1 - BSD223PH6327XTSA1

BSD223PH6327XTSA1

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Infineon Technologies

POWER MOSFET, P CHANNEL, 20 V, 390 MA, 0.7 OHM, SOT-363, SURFACE MOUNT

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BSD223PH6327XTSA1 - BSD223PH6327XTSA1

BSD223PH6327XTSA1

Active
Infineon Technologies

POWER MOSFET, P CHANNEL, 20 V, 390 MA, 0.7 OHM, SOT-363, SURFACE MOUNT

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBSD223PH6327XTSA1
Configuration2 P-Channel
Current - Continuous Drain (Id) @ 25°C390 mA
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]0.62 nC
Input Capacitance (Ciss) (Max) @ Vds56 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-VSSOP, SC-88, SOT-363
Power - Max [Max]250 mW
Rds On (Max) @ Id, Vgs1.2 Ohm
Supplier Device PackagePG-SOT363-6-1
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.27
10$ 0.20
100$ 0.10
500$ 0.09
1000$ 0.07
Digi-Reel® 1$ 0.27
10$ 0.20
100$ 0.10
500$ 0.09
1000$ 0.07
Tape & Reel (TR) 3000$ 0.06
6000$ 0.06

Description

General part information

BSD223 Series

Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Documents

Technical documentation and resources