IRF7555TR

Obsolete

Infineon Technologies

MOSFET 2P-CH 20V 4.3A MICRO8

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET 2P-CH 20V 4.3A MICRO8

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7555TR

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	4.3 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	15 nC
Input Capacitance (Ciss) (Max) @ Vds	1066 pF
Mounting Type	Surface Mount
Package / Case	8-MSOP, 8-TSSOP
Package / Case	3 mm
Package / Case [custom]	0.118 in
Power - Max [Max]	1.25 W
Rds On (Max) @ Id, Vgs	55 mOhm
Supplier Device Package	Micro8™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.2 V

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	Package / Case [custom]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Mounting Type	Technology	Power - Max [Max]	Supplier Device Package
Infineon Technologies IRF7555TR	4.3 A	20 V	1.2 V	8-MSOP 8-TSSOP	0.118 in	3 mm	15 nC	55 mOhm	Logic Level Gate	1066 pF	2 P-Channel	Surface Mount	MOSFET (Metal Oxide)	1.25 W	Micro8™

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 4.3A 1.25W Surface Mount Micro8™

Technical documentation and resources