IDW10G120C5BFKSA1

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Infineon Technologies

SILICON CARBIDE SCHOTTKY DIODE, COOLSIC 5G SERIES, DUAL COMMON CATHODE, 1.2 KV, 34 A, 57 NC

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Infineon Technologies

SILICON CARBIDE SCHOTTKY DIODE, COOLSIC 5G SERIES, DUAL COMMON CATHODE, 1.2 KV, 34 A, 57 NC

Technical Specifications

Parameters and characteristics for this part

Specification	IDW10G120C5BFKSA1

Current - Average Rectified (Io) (per Diode)	17 A
Current - Reverse Leakage @ Vr	40 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-3
Speed	200 mA, 500 ns
Supplier Device Package	PG-TO247-3-41
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.65 V

Part	Supplier Device Package	Package / Case	Current - Average Rectified (Io) (per Diode)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Technology	Current - Reverse Leakage @ Vr	Speed	Diode Configuration
Infineon Technologies IDW10G120C5BFKSA1	PG-TO247-3-41	TO-247-3	17 A	175 ░C	-55 C	1.65 V	1.2 kV	Through Hole	SiC (Silicon Carbide) Schottky	40 µA	200 mA 500 ns	1 Pair Common Cathode

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General part information

Diode Array 1 Pair Common Cathode 1200 V 17A Through Hole TO-247-3

Technical documentation and resources