IPN65R1K5CEATMA1
ObsoleteCOOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 650 V ; SOT-223 PACKAGE; 1500 MOHM; PRICE/PERFORMANCE
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IPN65R1K5CEATMA1
ObsoleteCOOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 650 V ; SOT-223 PACKAGE; 1500 MOHM; PRICE/PERFORMANCE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPN65R1K5CEATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.2 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power Dissipation (Max) | 5 W |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm |
| Supplier Device Package | PG-SOT223 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Arrow | N/A | 3000 | $ 0.29 | |
| 6000 | $ 0.28 | |||
Description
General part information
IPN65R1 Series
Infineon is growing the portfolio ofCoolMOS™ CEwith theSOT-223 packageas a cost effective alternative to DPAK that also enables footprint reduction in some designs. The package can be placed on a typical DPAK footprint and comes with only a small compromise in thermal behavior. The SOT-223 from Infineon targets LED lighting and mobile charger applications.
Documents
Technical documentation and resources