IPB240N03S4LR9ATMA1

Obsolete

Infineon Technologies

30V 240A 0.92MΩ@10V,100A 231W 2.2V 1 N-CHANNEL TO-263-7-3 MOSFETS ROHS

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Obsolete

Infineon Technologies

30V 240A 0.92MΩ@10V,100A 231W 2.2V 1 N-CHANNEL TO-263-7-3 MOSFETS ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	IPB240N03S4LR9ATMA1

Current - Continuous Drain (Id) @ 25°C	240 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	300 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	20300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK
Power Dissipation (Max) [Max]	231 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	0.92 mOhm
Supplier Device Package	PG-TO263-7-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2.2 V

Part	Rds On (Max) @ Id, Vgs	Qualification	Package / Case	Vgs(th) (Max) @ Id	Grade	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPB240N03S4LR9ATMA1	0.92 mOhm	AEC-Q101	D2PAK TO-263-7	2.2 V	Automotive	20300 pF	30 V	300 nC	231 W	4.5 V 10 V	Surface Mount	-55 °C	175 ░C	16 V	240 A	PG-TO263-7-3	MOSFET (Metal Oxide)	N-Channel
Infineon Technologies IPB240N04S4R9ATMA1	0.87 mOhm	AEC-Q101	D2PAK TO-263-7	4 V	Automotive	23000 pF	40 V		300 W	10 V	Surface Mount	-55 °C	175 ░C	20 V	240 A	PG-TO263-7-3	MOSFET (Metal Oxide)	N-Channel	290 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 240A (Tc) 231W (Tc) Surface Mount PG-TO263-7-3

Technical documentation and resources