IPB80N06S3L-06

Obsolete

Infineon Technologies

MOSFET N-CH 55V 80A TO263-3

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IPB80N06S3L-06

Obsolete

Infineon Technologies

MOSFET N-CH 55V 80A TO263-3

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPB80N06S3L-06

Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	196 nC
Input Capacitance (Ciss) (Max) @ Vds	9417 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	136 W
Rds On (Max) @ Id, Vgs	5.6 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2.2 V

IPB80N Series

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Technology	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Grade	Power Dissipation (Max) [Max]	Qualification	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
Infineon Technologies IPB80N06S4L07ATMA1	5680 pF	2.2 V	16 V	4.5 V 10 V	75 nC	PG-TO263-3-2	-55 °C	175 ░C	6.4 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	60 V	79 W	N-Channel	Surface Mount
Infineon Technologies IPB80N06S405ATMA1	6500 pF	4 V	20 V	10 V		PG-TO263-3-2	-55 °C	175 ░C	5.4 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	60 V	107 W	N-Channel	Surface Mount	81 nC
Infineon Technologies IPB80N06S205ATMA1	5110 pF	4 V	20 V	10 V		PG-TO263-3-2	-55 °C	175 ░C	4.8 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	55 V		N-Channel	Surface Mount	170 nC	Automotive	300 W	AEC-Q101
Infineon Technologies IPB80N04S4L04ATMA1	4690 pF	2.2 V	-16 V 20 V	4.5 V 10 V	60 nC	PG-TO263-3-2	-55 °C	175 ░C	4 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	40 V	71 W	N-Channel	Surface Mount
Infineon Technologies IPB80N03S4L03ATMA1	5100 pF	2.2 V	16 V	4.5 V 10 V	75 nC	PG-TO263-3-2	-55 °C	175 ░C	3.3 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	30 V	94 W	N-Channel	Surface Mount
Infineon Technologies IPB80N06S407ATMA1	4500 pF	4 V	20 V	10 V		PG-TO263-3-2	-55 °C	175 ░C	7.1 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	60 V	79 W	N-Channel	Surface Mount	56 nC
Infineon Technologies IPB80N04S3H4ATMA1	3900 pF	4 V	20 V	10 V	60 nC	PG-TO263-3-2	-55 °C	175 ░C	4.5 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	40 V	115 W	N-Channel	Surface Mount
Infineon Technologies IPB80N04S2H4ATMA2	4400 pF	4 V	20 V	10 V		PG-TO263-3-2	-55 °C	175 ░C	3.7 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	40 V		N-Channel	Surface Mount	148 nC		300 W
Infineon Technologies IPB80N08S406ATMA1	4800 pF	4 V	20 V	10 V	70 nC	PG-TO263-3-2	-55 °C	175 ░C		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	80 V	150 W	N-Channel	Surface Mount		Automotive		AEC-Q101	5.5 mOhm
Infineon Technologies IPB80N06S3L-06	9417 pF	2.2 V	16 V			PG-TO263-3-2	-55 °C	175 ░C	5.6 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	55 V	136 W	N-Channel	Surface Mount	196 nC					10 V	5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPB80N Series

N-Channel 55 V 80A (Tc) 136W (Tc) Surface Mount PG-TO263-3-2

Documents

Technical documentation and resources