
IPN95R2K0P7ATMA1
ActiveCOOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 950 V ; SOT-223 PACKAGE; 2000 MOHM; PRICE/PERFORMANCE
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IPN95R2K0P7ATMA1
ActiveCOOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 950 V ; SOT-223 PACKAGE; 2000 MOHM; PRICE/PERFORMANCE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPN95R2K0P7ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4 A |
| Drain to Source Voltage (Vdss) | 950 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 10 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power Dissipation (Max) [Max] | 7 W |
| Rds On (Max) @ Id, Vgs | 2 Ohm |
| Supplier Device Package | PG-SOT223 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.51 | |
| 10 | $ 0.96 | |||
| 100 | $ 0.64 | |||
| 500 | $ 0.50 | |||
| 1000 | $ 0.46 | |||
| Digi-Reel® | 1 | $ 1.51 | ||
| 10 | $ 0.96 | |||
| 100 | $ 0.64 | |||
| 500 | $ 0.50 | |||
| 1000 | $ 0.46 | |||
| Tape & Reel (TR) | 3000 | $ 0.40 | ||
| 6000 | $ 0.37 | |||
| 9000 | $ 0.37 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 1.39 | |
| 10 | $ 1.11 | |||
| 25 | $ 1.01 | |||
| 50 | $ 0.90 | |||
| 100 | $ 0.79 | |||
| 250 | $ 0.74 | |||
| 500 | $ 0.68 | |||
| 1000 | $ 0.64 | |||
Description
General part information
IPN95R2 Series
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest950 V CoolMOS™ P7technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th)of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in.
Documents
Technical documentation and resources