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IRF6775MTRPBF - IRF6614TR1PBF

IRF6775MTRPBF

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 150 V, 28 A, 0.047 OHM, DIRECTFET MZ, SURFACE MOUNT

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IRF6775MTRPBF - IRF6614TR1PBF

IRF6775MTRPBF

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 150 V, 28 A, 0.047 OHM, DIRECTFET MZ, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF6775MTRPBF
Current - Continuous Drain (Id) @ 25°C28 A, 4.9 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs36 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1411 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseDirectFET™ Isometric MZ
Power Dissipation (Max)2.8 W, 89 W
Rds On (Max) @ Id, Vgs56 mOhm
Supplier Device PackageDIRECTFET™ MZ
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.85
10$ 1.20
100$ 0.82
500$ 0.76
Digi-Reel® 1$ 1.85
10$ 1.20
100$ 0.82
500$ 0.76
Tape & Reel (TR) 4800$ 0.76
NewarkEach (Supplied on Cut Tape) 1$ 1.97
10$ 1.45
25$ 1.35
50$ 1.24
100$ 1.14
250$ 1.09
500$ 0.98
1000$ 0.90

Description

General part information

IRF6775 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.