IPS60R360PFD7SAKMA1

Obsolete

Infineon Technologies

COOLMOS™ PFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; IPAK SL TO-251 SL PACKAGE; 360 MOHM; PRICE/PERFORMANCE

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IPS60R360PFD7SAKMA1

Obsolete

Infineon Technologies

COOLMOS™ PFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; IPAK SL TO-251 SL PACKAGE; 360 MOHM; PRICE/PERFORMANCE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPS60R360PFD7SAKMA1

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12.7 nC
Input Capacitance (Ciss) (Max) @ Vds	534 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	43 W
Rds On (Max) @ Id, Vgs	360 mOhm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPS60R Series

Part	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drain to Source Voltage (Vdss)
Infineon Technologies IPS60R210PFD7SAKMA1	N-Channel	150 °C	-40 °C	1015 pF	23 nC	4.5 V	64 W	PG-TO251-3	Through Hole	210 mOhm	10 V	20 V	MOSFET (Metal Oxide)	16 A	IPAK TO-251-3 Short Leads TO-251AA	650 V
Infineon Technologies IPS60R360PFD7SAKMA1	N-Channel	150 °C	-40 °C	534 pF	12.7 nC	4.5 V	43 W	PG-TO251-3	Through Hole	360 mOhm	10 V	20 V	MOSFET (Metal Oxide)	10 A	IPAK TO-251-3 Short Leads TO-251AA	650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPS60R Series

The 600V CoolMOS™ PFD7 superjunction MOSFET (IPS60R360PFD7S) completements theCoolMOS™7 offering for consumer applications. The IPS60R360PFD7S in a TO-251 IPAK SL package features RDS(on)of 360mOhm resulting in low switching losses. The products come with a fast body diode ensuring a robust device and in turn reduced bill-of-material (BOM) for the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency overCoolMOS™P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.

Documents

Technical documentation and resources