APT34M120J

Active

Microchip Technology

MOSFET MOS8 1200 V 34 A SOT-227 4 SOT-227 TUBE ROHS COMPLIANT: YES

Find alt

Alpha

APT34M120J

Active

Microchip Technology

MOSFET MOS8 1200 V 34 A SOT-227 4 SOT-227 TUBE ROHS COMPLIANT: YES

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

MOSFET-1200V Series

Power MOS 7®is a family of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7®combines lower conduction and switching lossesalong with exceptionally fast switching speeds

Technical Specifications

Parameters and characteristics for this part

Specification	APT34M120J

Current - Continuous Drain (Id) (Tc)	35 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	560 nC
Input Capacitance (Ciss) (Max)	18200 pF
Mounting Type	Chassis Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-227-4, miniBLOC
Package Name	SOT-227
Power Dissipation (Max)	960 W
Rds On (Max)	300 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

MOSFET-1200V Series

Part	Gate Charge (Max)	Power Dissipation (Max)	Rds On (Max)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Vgs (Max)	Package Name	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Package / Case
Microchip Technology APT4M120K	43 nC	225 W	4 Ohm	1385 pF	5 V	10 V	-55 °C	150 °C	MOSFET (Metal Oxide)	30 V	TO-220 [K]	5 A	1200 V	Through Hole	N-Channel	TO-220-3
Microchip Technology APT12060LVRG	650 nC	625 W	600 mOhm	9500 pF	4 V	10 V	-55 °C	150 °C	MOSFET (Metal Oxide)	30 V	TO-264 (L)	20 A	1200 V	Through Hole	N-Channel	TO-264-3 TO-264AA
Microchip Technology APT7M120S	80 nC 80 nC	335 W	2.1 Ohm	2565 pF	5 V	10 V	-55 °C	150 °C	MOSFET (Metal Oxide)	30 V	D3PAK	8 A	1200 V	Surface Mount	N-Channel	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA
Microchip Technology APT12080LVRG	485 nC	520 W	800 mOhm	7800 pF 7800 pF	4 V	10 V	-55 °C	150 °C	MOSFET (Metal Oxide)	30 V	TO-264 (L)	16 A	1200 V	Through Hole	N-Channel	TO-264-3 TO-264AA
Microchip Technology APT28M120L	300 nC	1135 W	530 mOhm 530 mOhm	9670 pF	5 V	10 V	-55 °C	150 °C	MOSFET (Metal Oxide)	30 V	TO-264 (L) TO-264 [L]	29 A	1200 V	Through Hole	N-Channel	TO-264-3 TO-264AA
Microchip Technology APT12057B2LLG	290 nC	690 W	570 mOhm	6200 pF	5 V	10 V	-55 °C	150 °C	MOSFET (Metal Oxide)	30 V	T-MAX™ [B2]	22 A	1200 V	Through Hole	N-Channel	TO-247-3
Microchip Technology APT34M120J	560 nC	960 W	300 mOhm	18200 pF	5 V	10 V	-55 °C	150 °C	MOSFET (Metal Oxide)	30 V	SOT-227	35 A	1200 V	Chassis Mount	N-Channel	miniBLOC SOT-227-4
Microchip Technology APT14M120S	145 nC	625 W	1.1 Ohm	4765 pF	5 V	10 V	-55 °C	150 °C	MOSFET (Metal Oxide)	30 V	D3PAK	14 A	1200 V	Surface Mount	N-Channel	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA
Microchip Technology APT24M120L	260 nC	1040 W	680 mOhm	8370 pF	5 V	10 V	-55 °C	150 °C	MOSFET (Metal Oxide)	30 V	TO-264 (L) TO-264 [L]	24 A	1200 V	Through Hole	N-Channel	TO-264-3 TO-264AA
Microchip Technology APT1201R6BVRG