IXFA3N80

Obsolete

IXYS

MOSFET N-CH 800V 3.6A TO263

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Obsolete

IXYS

MOSFET N-CH 800V 3.6A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	IXFA3N80

Current - Continuous Drain (Id) @ 25°C	3.6 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	685 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	100 W
Rds On (Max) @ Id, Vgs	3.6 Ohm
Supplier Device Package	TO-263AA (IXFA)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs(th) (Max) @ Id
IXYS IXFA3N80	Surface Mount	24 nC	MOSFET (Metal Oxide)	100 W	3.6 Ohm	N-Channel	TO-263AA (IXFA)	3.6 A	10 V	800 V	20 V	685 pF	-55 °C	150 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 3.6A (Tc) 100W (Tc) Surface Mount TO-263AA (IXFA)

Technical documentation and resources

No documents available