IPC218N04N3X7SA1

NRND

Infineon Technologies

MV POWER MOS

Search across all available documentation for this part.

NRND

Infineon Technologies

MV POWER MOS

Technical Specifications

Parameters and characteristics for this part

Specification	IPC218N04N3X7SA1

Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Mounting Type	Surface Mount
Package / Case	Die
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	Die
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Mounting Type
Infineon Technologies IPC218N04N3X7SA1	50 mOhm	N-Channel	Die	MOSFET (Metal Oxide)	40 V	4 V	10 V	Die	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	6195	$ 1.72

General part information

N-Channel 40 V Surface Mount Die

Technical documentation and resources

No documents available