AONP36336

Active

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 50A 8DFN

Search across all available documentation for this part.

Active

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 50A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	AONP36336

Configuration	2 N-Channel (Dual) Asymmetrical
Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	29 nC
Input Capacitance (Ciss) (Max) @ Vds	1330 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max	33 W, 3.1 W, 30 W, 3.4 W
Rds On (Max) @ Id, Vgs	4.7 mOhm
Supplier Device Package	8-DFN-EP
Supplier Device Package [x]	3.3
Supplier Device Package [y]	3.3
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.9 V

Part	Vgs(th) (Max) @ Id	Package / Case	Power - Max	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Supplier Device Package [y]	Supplier Device Package [x]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Drain to Source Voltage (Vdss)
Alpha & Omega Semiconductor Inc. AONP36336	1.9 V	8-PowerVDFN	3.1 W 3.4 W 30 W 33 W	29 nC	4.7 mOhm	3.3	3.3	8-DFN-EP	-55 °C	150 °C	1330 pF	2 N-Channel (Dual) Asymmetrical	50 A	Surface Mount	MOSFET (Metal Oxide)	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 30V 50A (Tc) 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc) Surface Mount 8-DFN-EP (3.3x3.3)

Technical documentation and resources