Specification	SIJA52ADP-T1-GE3

Current - Continuous Drain (Id) (Ta)	41.6 A
Current - Continuous Drain (Id) (Tc)	131 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	100 nC
Input Capacitance (Ciss) (Max)	5500 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	4.8 W, 48 W
Rds On (Max)	1.63 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-16 V
Vgs (Max) Positive	20 V
Vgs(th) (Max)	2.4 V

SIJA52 Series

Part	Vgs (Max) Negative	Vgs (Max) Positive	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Rds On (Max)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Package Name	Mounting Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	FET Type	Package / Case	Gate Charge (Max)	Technology	Drain to Source Voltage (Vdss)
Vishay Dale SIJA52ADP-T1-GE3	-16 V	20 V	-55 °C	150 °C	4.8 W 48 W	1.63 mOhm	5500 pF	41.6 A	131 A	PowerPAK® SO-8	Surface Mount	10 V	4.5 V	2.4 V	N-Channel	PowerPAK® SO-8	100 nC	MOSFET (Metal Oxide)	40 V
Vishay Dale SIJA52DP-T1-GE3	-16 V	20 V	-55 °C	150 °C	48 W	1.7 mOhm	7150 pF		60 A	PowerPAK® SO-8	Surface Mount	10 V	4.5 V	2.4 V	N-Channel	PowerPAK® SO-8	150 nC	MOSFET (Metal Oxide)	40 V

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