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IPB720P15LMATMA1 - PG-TO263-3

IPB720P15LMATMA1

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Infineon Technologies

OPTIMOS™ P-CHANNEL MOSFET 100V IN D²PAK IPB720P15LM

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IPB720P15LMATMA1 - PG-TO263-3

IPB720P15LMATMA1

Active
Infineon Technologies

OPTIMOS™ P-CHANNEL MOSFET 100V IN D²PAK IPB720P15LM

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPB720P15LMATMA1
Current - Continuous Drain (Id) @ 25°C4.6 A, 41 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs224 nC
Input Capacitance (Ciss) (Max) @ Vds11000 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)300 W, 3.8 W
Rds On (Max) @ Id, Vgs [Max]72 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.58
10$ 3.46
100$ 2.54
500$ 2.47
Digi-Reel® 1$ 4.58
10$ 3.46
100$ 2.54
500$ 2.47
Tape & Reel (TR) 1000$ 2.02
NewarkEach (Supplied on Cut Tape) 1$ 4.67
10$ 3.53
25$ 3.21
50$ 2.90
100$ 2.59
250$ 2.37
500$ 2.15
1000$ 2.10

Description

General part information

IPB720P Series

OptiMOS™ P-Channel MOSFETs 100Vin D²PAK package represents the new technology targeted forbattery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on)range and improves efficiency at low loads due to low Qg.

Documents

Technical documentation and resources