
IPB720P15LMATMA1
ActiveOPTIMOS™ P-CHANNEL MOSFET 100V IN D²PAK IPB720P15LM
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IPB720P15LMATMA1
ActiveOPTIMOS™ P-CHANNEL MOSFET 100V IN D²PAK IPB720P15LM
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPB720P15LMATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.6 A, 41 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 224 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 11000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 300 W, 3.8 W |
| Rds On (Max) @ Id, Vgs [Max] | 72 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPB720P Series
OptiMOS™ P-Channel MOSFETs 100Vin D²PAK package represents the new technology targeted forbattery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on)range and improves efficiency at low loads due to low Qg.
Documents
Technical documentation and resources