Zenode.ai Logo
STPSC30G12WL

STPSC30G12WL

Active
STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.2 KV, 30 A, 149 NC, DO-247LL

Find alt
STPSC30G12WL

STPSC30G12WL

Active
STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.2 KV, 30 A, 149 NC, DO-247LL

Find alt

Description

General part information

STPSC30 Series

The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VFSchottky diode structure with a 1200 V rating. Thanks to the Schottky construction, no recovery is shown during turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Based on latest technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions while bringing robustness to the design. Its high forward surge capability ensures a good robustness during transient phases.

Technical Specifications

Parameters and characteristics for this part

SpecificationSTPSC30G12WL
Capacitance2272 pF
Current - Average Rectified (Io)30 A
Current - Reverse Leakage225 µA
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseTO-247-2
Package NameDO-247 LL
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Speed - Fast Recovery (Minimum)500 mA
Speed - Recovery Current500 mA, 500 mA
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max)1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

Sign up — freeLog in

CAD

3D models and CAD resources for this part