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71V65603 - Block Diagram

71V65603S100BQGI

Obsolete
Renesas Electronics Corporation

3.3V 256K X 36 ZBT SYNCHRONOUS 3.3V I/O PIPELINED SRAM

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71V65603 - Block Diagram

71V65603S100BQGI

Obsolete
Renesas Electronics Corporation

3.3V 256K X 36 ZBT SYNCHRONOUS 3.3V I/O PIPELINED SRAM

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Description

General part information

71V65603 Series

The 71V65603 3.3V CMOS SRAM, organized as 256K X 36, is designed to eliminate dead bus cycles when turning the bus around between reads and writes or writes and reads. Thus, it has been given the name ZBT™, or Zero Bus Turnaround. The 71V65603 contains data I/O, address, and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.

Technical Specifications

Parameters and characteristics for this part

Specification71V65603S100BQGI
Access Time5 ns
Clock Frequency100 MHz
Memory Depth256 K
Memory FormatSRAM
Memory Interface (Type)Parallel
Memory Size9 Mbit
Memory TypeVolatile
Memory Width36 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package / Case165-TBGA
Package Length13 mm
Package Name165-CABGA
Package Width15 mm
TechnologySDR (ZBT), SRAM - Synchronous
Voltage - Supply (Maximum)3.465 V
Voltage - Supply (Minimum)3.135 V

Pricing

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