ZXMP7A17GQTC
ActiveDiodes Inc
TRANS MOSFET P-CH 70V 2.6A 4-PIN(3+TAB) SOT-223 T/R AUTOMOTIVE AEC-Q101
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ZXMP7A17GQTC
ActiveDiodes Inc
TRANS MOSFET P-CH 70V 2.6A 4-PIN(3+TAB) SOT-223 T/R AUTOMOTIVE AEC-Q101
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | ZXMP7A17GQTC |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.6 A |
| Drain to Source Voltage (Vdss) | 70 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 18 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 635 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power Dissipation (Max) [Max] | 2 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 160 mOhm |
| Supplier Device Package | SOT-223-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 1 V |
ZXMP7A17GQ Series
70V P-Channel Enhancement Mode MOSFET
| Part | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Package / Case | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Technology | Supplier Device Package | Vgs(th) (Max) @ Id | Grade | Qualification | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 635 pF | 70 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 2.11 W | 160 mOhm | -55 °C | 150 °C | 20 V | Surface Mount | 18 nC | P-Channel | 3.8 A | 4.5 V 10 V | MOSFET (Metal Oxide) | TO-252-3 | 1 V | |||
Diodes Inc | 635 pF | 70 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 2.11 W | 160 mOhm | -55 °C | 150 °C | 20 V | Surface Mount | 18 nC | P-Channel | 3.8 A | 4.5 V 10 V | MOSFET (Metal Oxide) | TO-252-3 | 1 V | |||
Diodes Inc | 635 pF | 70 V | TO-261-4 TO-261AA | 160 mOhm | -55 °C | 150 °C | 20 V | Surface Mount | 18 nC | P-Channel | 2.6 A | 4.5 V 10 V | MOSFET (Metal Oxide) | SOT-223-3 | 1 V | Automotive | AEC-Q101 | 2 W |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
ZXMP7A17GQ Series
This new generation of trench MOSFETs utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.
Documents
Technical documentation and resources