JANTXV2N3868

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Microchip Technology

PNP SILICON LOW-POWER -40V TO -60V, -3A

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JANTXV2N3868

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Microchip Technology

PNP SILICON LOW-POWER -40V TO -60V, -3A

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Description Specifications Series Pricing CAD Documents

Description

General part information

2N3868 Series

This specification covers the performance requirements for PNP, silicon, switching 2N3867 and 2N3868 transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500/350. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated (die) device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. The device package outlines are as follows: TO- 5, TO-39 and U4 (SMD .22) suffix for all encapsulated device types. For unencapsulated devices.

Technical Specifications

Parameters and characteristics for this part

Specification	JANTXV2N3868

Current - Collector (Ic) (Max)	0.003 A
Current - Collector Cutoff (Max)	100 µA
DC Current Gain (hFE) (Min)	30
Grade	Military
Mounting Type	Through Hole
Operating Temperature (Max)	200 °C
Operating Temperature (Min)	-65 °C
Package Name	TO-5
Power - Max	1 VA
Qualification	350, MIL-PRF-19500
Transistor Type	PNP
Vce Saturation (Max)	1.5 V
Voltage - Collector Emitter Breakdown (Max)	60 V

2N3868 Series

PNP Silicon Low-Power -40V to -60V, -3A

Part	DC Current Gain (hFE) (Min)	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max)	Current - Collector Cutoff (Max)	Transistor Type	Power - Max	Current - Collector (Ic) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Package / Case	Qualification	Grade
Microchip Technology 2N3868	30	Through Hole	60 V	1.5 V	100 µA	PNP	1 VA	0.003 A	-65 °C	200 °C	TO-5
Microchip Technology JANTX2N3868	30	Through Hole	60 V	1.5 V	100 µA	PNP	1 VA	0.003 A	-65 °C	200 °C	TO-5	TO-205AA TO-5-3 Metal Can	350 MIL-PRF-19500	Military
Microchip Technology JANTXV2N3868	30	Through Hole	60 V	1.5 V	100 µA	PNP	1 VA	0.003 A	-65 °C	200 °C	TO-5		350 MIL-PRF-19500	Military
Microchip Technology 2N3868S	30	Through Hole	60 V	1.5 V	100 µA	PNP	1 VA	0.003 A	-65 °C	200 °C	TO-39 (TO-205AD)
Microchip Technology JANTXV2N3868S	30	Through Hole	60 V	1.5 V	100 µA	PNP	1 VA	0.003 A	-65 °C	200 °C	TO-39 (TO-205AD)	TO-205AD TO-39-3 Metal Can	350 MIL-PRF-19500	Military
Microchip Technology JANTX2N3868S	30	Through Hole	60 V	1.5 V	100 µA	PNP	1 VA	0.003 A	-65 °C	200 °C	TO-39 (TO-205AD)	TO-205AD TO-39-3 Metal Can	350 MIL-PRF-19500	Military

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Product Change Notice EN

2N3867 2N3867S 2N3868 2N3868S

JANTXV2N3868 | Datasheet