DMN6075SQ-7

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Diodes Inc

POWER MOSFET, N CHANNEL, 60 V, 2 A, 0.069 OHM, SOT-23, SURFACE MOUNT

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Active

Diodes Inc

POWER MOSFET, N CHANNEL, 60 V, 2 A, 0.069 OHM, SOT-23, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	DMN6075SQ-7

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12.3 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	606 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	85 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

60V N-Channel Enhancement Mode MOSFET

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id	Mounting Type	Qualification	Grade	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Diodes Inc DMN6075SQ-7	SC-59 SOT-23-3 TO-236-3	2 A	N-Channel	60 V	-55 °C	150 °C	SOT-23-3	4.5 V 10 V	85 mOhm	MOSFET (Metal Oxide)	3 V	Surface Mount	AEC-Q101	Automotive	20 V	12.3 nC	606 pF
Diodes Inc DMN6075SQ-13	SC-59 SOT-23-3 TO-236-3	2 A	N-Channel	60 V	-55 °C	150 °C	SOT-23-3	4.5 V 10 V	85 mOhm	MOSFET (Metal Oxide)	3 V	Surface Mount	AEC-Q101	Automotive	20 V	12.3 nC	606 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP.