IRFD210

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Harris Corporation

0.6A 200V 1.500 OHM N-CHANNEL

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Harris Corporation

0.6A 200V 1.500 OHM N-CHANNEL

Technical Specifications

Parameters and characteristics for this part

Specification	IRFD210

Current - Continuous Drain (Id) @ 25°C	600 mA
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8.2 nC
Input Capacitance (Ciss) (Max) @ Vds	140 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-DIP (0.300", 7.62mm)
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	1.5 Ohm
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Technology	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)
Harris Corporation IRFD210	N-Channel	MOSFET (Metal Oxide)	Through Hole	20 V	8.2 nC	600 mA	1 W	4 V	1.5 Ohm	140 pF	-55 °C	150 °C	10 V	4-DIP (0.300" 7.62mm)	4-DIP Hexdip HVMDIP	200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	329	$ 0.91

General part information

N-Channel 200 V 600mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP

Technical documentation and resources

No documents available