FMP76-01T

Obsolete

IXYS

MOSFET N/P-CH 100V 54A I4-PAC

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Obsolete

IXYS

MOSFET N/P-CH 100V 54A I4-PAC

Technical Specifications

Parameters and characteristics for this part

Specification	FMP76-01T

Configuration	Common Drain, N and P-Channel
Current - Continuous Drain (Id) @ 25°C	54 A, 62 A
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs	104 nC
Gate Charge (Qg) (Max) @ Vgs	197 nC
Input Capacitance (Ciss) (Max) @ Vds	5080 pF, 1370 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	ISOPLUSi5-Pak™
Power - Max	132 W, 89 W
Rds On (Max) @ Id, Vgs	24 mOhm, 11 mOhm
Supplier Device Package	ISOPLUS i4-PAC™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V, 4.5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Power - Max	Mounting Type	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds
IXYS FMP76-01T	104 nC	197 nC	ISOPLUS i4-PAC™	54 A 62 A	4 V 4.5 V	100 V	ISOPLUSi5-Pak™	-55 °C	150 °C	Common Drain N and P-Channel	89 W 132 W	Through Hole	MOSFET (Metal Oxide)	11 mOhm 24 mOhm	1370 pF 5080 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 100V 54A (Tc), 62A (Tc) 89W, 132W Through Hole ISOPLUS i4-PAC™

Technical documentation and resources

No documents available