IPI084N06L3GXKSA1

Obsolete

Infineon Technologies

TRANS MOSFET N-CH 60V 50A 3-PIN(3+TAB) TO-262 TUBE

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Obsolete

Infineon Technologies

TRANS MOSFET N-CH 60V 50A 3-PIN(3+TAB) TO-262 TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	IPI084N06L3GXKSA1

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Input Capacitance (Ciss) (Max) @ Vds	4900 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	79 W
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

Part	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology
Infineon Technologies IPI084N06L3GXKSA1	I2PAK TO-262-3 Long Leads TO-262AA	N-Channel	29 nC	-55 °C	175 ░C	60 V	2.2 V	4900 pF	4.5 V 10 V	20 V	79 W	Through Hole	50 A	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 50A (Tc) 79W (Tc) Through Hole PG-TO262-3-1

Technical documentation and resources