SIDC23D60E6X1SA1

Obsolete

Infineon Technologies

DIODE GEN PURP 600V 50A DIE

Search across all available documentation for this part.

Obsolete

Infineon Technologies

DIODE GEN PURP 600V 50A DIE

Technical Specifications

Parameters and characteristics for this part

Specification	SIDC23D60E6X1SA1

Current - Average Rectified (Io)	50 A
Current - Reverse Leakage @ Vr	27 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Die
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	Die
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

Part	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Speed	Technology	Mounting Type	Supplier Device Package	Current - Average Rectified (Io)	Package / Case	Voltage - Forward (Vf) (Max) @ If
Infineon Technologies SIDC23D60E6X1SA1	27 µA	600 V	150 °C	-55 °C	Standard Recovery >500ns	200 mA	Standard	Surface Mount	Die	50 A	Die	1.25 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 50A Surface Mount Die

Technical documentation and resources