SCT2H12NWBTL1
ActiveRohm Semiconductor
1700V, 3.9A, 7-PIN SMD, SILICON-CARBIDE (SIC) MOSFET
SCT2H12NWBTL1
ActiveRohm Semiconductor
1700V, 3.9A, 7-PIN SMD, SILICON-CARBIDE (SIC) MOSFET
Description
General part information
SCT2H12NWB Series
SCT2H12NWB is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.
Technical Specifications
Parameters and characteristics for this part
| Specification | SCT2H12NWBTL1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 3.9 A |
| Drain to Source Voltage (Vdss) | 1700 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 24 nC, 24 nC |
| Input Capacitance (Ciss) (Max) | 197 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package Leads | 7 Leads |
| Package Name | TO-263CA-7LSHYAD, D2PAK |
| Power Dissipation (Max) | 39 W |
| Rds On (Max) | 1.5 Ohm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -6 V |
| Vgs (Max) Positive | 22 V |
| Vgs(th) (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
SCT2H12NWBTL1 | Datasheet
Precautions When Measuring the Rear of the Package with a Thermocouple
Basics and Design Guidelines for Gate Drive Circuits
Types and Features of Transistors
5kW High-Efficiency Fan-less Inverter
Measurement Method and Usage of Thermal Resistance RthJC
Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs
Two-Resistor Model for Thermal Simulation
The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level
800V Three-Phase Output LLC DC/DC Resonant Converter
Calculating Power Loss from Measured Waveforms
How to measure the oscillation occurs between parallel-connected devices
Solving the challenges of driving SiC MOSFETs with new packaging developments
Notes on Gate Drive Voltage Setting and Linear Mode Application of SiC MOSFET
Application Note for SiC Power Devices and Modules
How to Suppress the Parallel Drive Oscillation in SiC Modules
Notes for Temperature Measurement Using Thermocouples
How to Use LTspice® Models: Tips for Improving Convergence
Thermal Resistance Measurement Method for SiC MOSFET
Oscillation countermeasures for MOSFETs in parallel
How to Use PSIM Models
How to Use LTspice® Models
Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules
About Export Administration Regulations (EAR)
Impedance Characteristics of Bypass Capacitor
What is a Thermal Model? (SiC Power Device)
Compliance of the ELV directive
Anti-Whisker formation
LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units
θ<sub>JC</sub> and Ψ<sub>JT</sub>
Precautions for Thermal Resistance of Insulation Sheet
Part Explanation
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
Notes for Calculating Power Consumption:Static Operation
How to Use PLECS Models
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
Precautions during gate-source voltage measurement for SiC MOSFET
Design Method for Comparator-less Miller Clamp Circuits
Method for Monitoring Switching Waveform
Importance of Probe Calibration When Measuring Power: Deskew
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
Calculation of Power Dissipation in Switching Circuit
Gate-Source Voltage Surge Suppression Methods
PCB Layout Thermal Design Guide
θ<sub>JA</sub> and Ψ<sub>JT</sub>
Basics of Thermal Resistance and Heat Dissipation
How to Use Thermal Models
SiC MOSFET Layout Design Considerations
4 Steps for Successful Thermal Designing of Power Devices
Snubber circuit design methods for SiC MOSFET
How to Use the Thermal Resistance and Thermal Characteristics Parameters
Generation Mechanism of Voltage Surge on Commutation Side (Basic)
Best practices for the connection of Driver Source/Emitter terminals in discrete devices
Judgment Criteria of Thermal Evaluation
Gate-source voltage behaviour in a bridge configuration
About Flammability of Materials
Notes for Temperature Measurement Using Forward Voltage of PN Junction
What Is Thermal Design