Zenode.ai Logo
Beta
K
DMT3020UFDB-7 - U-DFN2020-6

DMT3020UFDB-7

Active
Diodes Inc

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Search across all available documentation for this part.

DMT3020UFDB-7 - U-DFN2020-6

DMT3020UFDB-7

Active
Diodes Inc

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMT3020UFDB-7
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C6.5 A
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs8.8 nC
Input Capacitance (Ciss) (Max) @ Vds383 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-UDFN Exposed Pad
Power - Max [Max]860 mW
Rds On (Max) @ Id, Vgs21 mOhm
Supplier Device PackageU-DFN2020-6 (Type B)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3000$ 0.17
6000$ 0.16
9000$ 0.15
30000$ 0.15

Description

General part information

DMT3020UFDB Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.