ZXMC10A816N8TC

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Diodes Inc

TRANS MOSFET N/P-CH 100V 2.1A/2.2A 8-PIN SO T/R

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Diodes Inc

TRANS MOSFET N/P-CH 100V 2.1A/2.2A 8-PIN SO T/R

Technical Specifications

Parameters and characteristics for this part

Specification	ZXMC10A816N8TC

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	100 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	9.2 nC
Input Capacitance (Ciss) (Max) @ Vds	717 pF, 497 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	1.8 W
Rds On (Max) @ Id, Vgs	230 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.4 V

NRND = Not Recommended for New Design

Part	Package / Case	Package / Case [y]	Package / Case [x]	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Current - Continuous Drain (Id) @ 25°C
Diodes Inc ZXMC10A816N8TC	8-SOIC	3.9 mm	0.154 in	100 V	Surface Mount	MOSFET (Metal Oxide)	1.8 W	9.2 nC	230 mOhm	N and P-Channel	-55 °C	150 °C	8-SO	2.4 V	497 pF 717 pF	Logic Level Gate	2 A

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General part information

This new generation complementary dual MOSFET features low on-resistance achievable with low gate drive.

Technical documentation and resources